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Gallium nitride (GaN) power semiconductor technology, combined with modular design advancements, has enabled the development of high-power continuous wave (CW) and pulsed amplifiers at microwave frequencies. By minimizing parasitic elements, utilizing shorter gate lengths, and operating at higher voltages, GaN transistors have achieved greater output power density, broader bandwidth, and improved DC-to-RF efficiency.
As a leading choice for Reflective Frequency Electronic Warfare (CREW) applications, GaN has been widely deployed in practical systems, with thousands of amplifiers already in use. The technology is now also being applied in airborne electronic warfare, where amplifiers capable of delivering hundreds of watts over multiple frequency octaves are under development.
ADI’s "Bit to RF" program integrates its expertise in baseband signal processing with GaN power amplifier (PA) technology. Techniques such as pre-distortion and envelope modulation will enhance PA linearity and efficiency. Designers favor GaN devices because they support significantly higher operating voltages—three to five times that of GaAs—and allow approximately twice the current per unit FET. This enables higher load impedances at the same output power level, which is critical for system performance.
Previously, GaAs or LDMOS-based designs often had very low device impedance, limiting bandwidth and increasing insertion loss. Due to their high impedance, early adopters sometimes used only one device in mismatched test setups. However, GaN's reliability and high bandgap energy (3.4 eV vs. 1.4 eV for GaAs) make it ideal for high-reliability space applications. Life tests at junction temperatures above 225°C show that GaN devices can exceed one million hours of mean time to failure (MTTF).
Despite these advantages, GaN remains more expensive than GaAs or Si LDMOS, typically two to three times pricier. This has limited its adoption in cost-sensitive areas like wireless infrastructure and consumer electronics. However, GaN-on-silicon processes are emerging as a more cost-effective option. As wafer sizes increase (to 150 mm and beyond), costs are expected to drop by about 50%.
Traditional TWT amplifiers used in weather radar and target acquisition operate at high voltages (10–100 kV) and suffer from poor reliability, with lifespans of only 1,200–1,500 hours. In contrast, ADI has developed an 8 kW solid-state X-band GaN power amplifier using a layered merging method. It combines 256 MMICs, each producing ~35 W, ensuring redundancy and maintaining performance even if some components fail. This topology uses waveguide structures to balance isolation and insertion loss.
The 8 kW amplifier is modular, with four 2 kW units combining via waveguides. It is currently water-cooled, but air-cooled versions are in development. Future iterations aim to scale up to 24 kW or even 32 kW by integrating multiple modules.
ADI is also developing advanced GaN power modules with double the output power of current designs. These modules will be sealed for extreme environments and incorporate next-gen combiners to reduce insertion loss, enabling pulse outputs up to 75–100 kW. They will include built-in diagnostics, fault monitoring, and real-time bias control for MMICs.
For wideband applications, ADI offers a VHF to S-band amplifier delivering 50 W from 115 MHz to 2 GHz. It features BIT capabilities, thermal protection, and an integrated DC-DC converter. For frequencies above 2 GHz, a 50 W CW amplifier covers 2–18 GHz, with options for 12 W benchtop and 100 W rack-mounted models. Future plans include scaling to 200 W and beyond using advanced power modules and combiners.
These developments highlight GaN’s growing role in high-performance, cost-effective RF systems. As manufacturing scales and yields improve, GaN’s performance and affordability will continue to rise, making it a key player in millimeter-wave and wideband applications.