According to a recent study published by the Reuters research team in November, scientists from Michigan have discovered that adding boron to indium gallium nitride (InGaN) could potentially allow for a thicker middle layer in LED semiconductors. This innovation may help improve light emission efficiency by addressing the issue of current injection fluctuations. The findings were published in Applied Physics Letters.

LEDs are made up of two types of semiconductor materials: P-type, which has positive charge carriers, and N-type, which contains free electrons. When electricity is applied, holes (positive charges) and electrons meet in the middle layer, where they recombine and emit light. The material used in this middle layer determines the wavelength of the emitted light, which in turn affects the color.

However, when too many electrons are injected into the middle layer, they can collide with each other instead of combining with holes. This phenomenon, known as Auger recombination, reduces the overall efficiency of the LED.

To solve this problem, increasing the thickness of the middle layer could provide more space for electrons and holes to combine effectively. However, this isn't straightforward, especially in crystalline semiconductor materials.

LED semiconductors are made of crystals with a specific atomic arrangement, known as the lattice parameter. When different materials are stacked, their lattice parameters must match to avoid structural defects. If they don’t align properly, the crystal structure can become distorted, leading to performance issues.

Researchers at the University of Michigan, Williams and Kioupakis, used predictive models to show that introducing boron into InGaN can help increase the thickness of the middle layer without causing structural problems. The resulting material, BInGaN, emits light at a wavelength very close to standard InGaN, making it suitable for tuning to various colors.

While the practical application of this discovery in real-world manufacturing remains uncertain, and determining the optimal amount of boron to add is still a challenge, the research represents a significant step forward in LED technology. It opens new possibilities for more efficient and versatile lighting solutions.

Editor: Yan Zhixiang

33kV Power Transformer

For the 33kV Oil Immersed Power Transformer, we can produce capacity upto 50MVA. We use the best quality of raw material and advance design software to provide low noise, low losses, low partial discharge and high short-circuit impedance for power transformer.

Our power transformer are widely used in national grid, city grid, rural grid, power plant, industrial and mining enterprise, and petrochemical industry.

Conventer Transformer,33Kv Power Transformer,33Kv Power Transformer With Octc,Power Transformer With Octc

Hangzhou Qiantang River Electric Group Co., Ltd.(QRE) , https://www.qretransformer.com